Three-dimensional k·p quantum simulations of p-type nanowire MOS transistors: Influence of ionized impurity

We have developed a full three-dimensional real-space quantum transport simulator for p-type nanowire field effect transistor. The model is based on a six-band k·p Hamiltonian expressed within the non-equilibrium Green's function formalism. Based on this simulator we have studied the influence of a single donor and acceptor dopant on the transport properties. Numerical calculations show that an acceptor impurity induces both resonant and anti-resonant interferences which degrade the transistor performances.