Neutron radiation effects in high electron mobility transistors [AlGaAs/GaAs]

The effect of fast neutron radiation has been investigated in High Electron Mobility Transistors (HEMT's). Devices with different layer structures have been employed for the better understanding of failure mechanism sources. The deep traps introduced by neutron irradiation in the AlGaAs donor layer have been, for the first time, studied. The application of charge control model allowed the determination of buffer layer degradation and the theoretical estimation of the shift of the threshold voltage.