Novel cross-point resistive switching memory with self-formed schottky barrier

By characterizing the resistive switching state in Al/PCMO device, we propose, for the first time, the feasibility of cross-point memory without any selection device. Self-formed Schottky barrier by redox reaction at Al/PCMO interface can be used as a selection device. Using self-formed Schottky barrier, we can build simple 4F
²
cross-point memory array without additional process steps.