New degradation phenomenon in wide channel poly-Si TFTs fabricated by low temperature process

A new degradation phenomenon in low temperature (/spl les/425/spl deg/C) polycrystalline-silicon thin film transistors (poly-Si TFTs) has been investigated. The subthreshold characteristics are significantly shifted in the negative direction, which is particularly marked in wide (typical channel width: W=100 /spl mu/m) n-channel TFTs. It is considered that this degradation phenomenon is induced by the generation of holes and increase of the temperature during the operation.