Modulators of THz range based on integrated silicon P-I-N-structures in dielectric waveguides

Modulators of terahertz (THz) range on the base of silicon integrated p-i-n-structures in the isolated silicon dielectric waveguide are investigated. For the double injection problem, the generalized boundary conditions at the injecting electrodes have been used in the case of highly doped p
⁺⁺
, n
⁺⁺
regions. The silicon dielectric waveguides possess low losses in the regime without injection. The investigations of modulation properties of integrated p-i-n-structures in dielectric waveguides of THz range have demonstrated a possibility to use these structures up to the frequencies ≈ 8 THz.