A W-band LNA in 0.18-μm SiGe BiCMOS

This paper presents the design and implementation of a W-band LNA. Fabricated in a 0.18-μm SiGe BiCMOS technology, the five-stage LNA achieves a peak power gain of 19 dB with a 3-dB bandwidth from 70–97 GHz and a minimum noise figure of 9 dB. The LNA exhibits more than 10-dB gain and input return loss <-12 dB across the entire W-band (75–110 GHz). The SiGe LNA is suitable for several W-band applications including 77/79-GHz automotive radars and passive imaging in the 80–110 GHz window.