Growth and characterization of TlInGaAsN/TlGaAsN triple quantum wells on GaAs substrates

TlInGaAsN/TlGaAsN triple quantum wells (TQWs) with different In and N concentration in the quantum wells (QWs) and barriers were grown by gas-source molecular beam epitaxy. The higher Tl incorporation was obtained for the TlInGaAsN/TlGaAsN TQWs having higher N concentration in the QWs region. Temperature dependencies of the photoluminescence (PL) spectra for the TlInGaAsN /TlGaAsN TQWs with different Tl incorporation in active region were compared and studied. Reduction in the temperature dependence of the PL peak energy was observed by increased Tl incorporation in the active region.