GaN large-signal oscillator design using Auxiliary Generator measurements

This paper describes the usage of the Auxiliary Generator (AG) method in the large-signal design process of a microwave oscillator. The oscillator circuit is based on a high power Gallium-Nitride (GaN) High Electron Mobility Transistor (HEMT) as active component and is used to ignite and maintain a plasma, which acts as a built-in non-linear load. The oscillator works in class A-AB in the range of 2.3 GHz. The AG method is used to monitor and optimize the oscillation characteristics under large-signal oscillation conditions.