Reliability of MOCVD grown AlGaAs/GaAs laser diodes at -20 C heatsink temperature

Wide-stripe 808-nm laser diodes operated at constant current and at a heatsink temperature of -20 C for over 10000 h are discussed. The MOCVD-grown double-heterostructure lasers were processed with 60- mu m-wide oxide stripes and 150- mu m-long high-reflectivity passivated cavities. Devices were mounted p-side down on BeO heatsinks with indium solder. Based on gradual degradation of output power (approximately 8*10/sup -5/ mW per kilohour), a median lifetime of over 30 years is projected.<
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