Enhanced Electro-Optic Phase Modulation in InGaAs Quantum Posts at 1500 nm

Electro-optic properties of self assembled InGaAs quantum posts have been studied experimentally. For TE polarization phase modulation enhancement up to 27% over devices containing InGaAs quantum well of the same average composition and thickness was observed indicating significant electro-optic coefficient increase in quantum posts. The measured linear and quadratic electro-optic coefficients of the quantum posts were as high as 17.8 × 10
^-12
m/V and 49.4 × 10
^-21
m
²
/V
²
at 1500 nm which are more than an order of magnitude larger than those of GaAs.