Effect of Deposition Temperature on Plasma Grown Aluminum Oxide Films

The physical and electrical properties of aluminum oxide films deposited from aluminumtrimethyl under plasma conditions have been studied as a function of the silicon substrate temperature. It is shown that an increase of the temperature enhances the oxidation reaction and gives dense films, The C(V) characterization of MOS structures shows a large scattering in the results. However higher temperature (up to 300°C) gives lower flat band voltage, lower hysteresis which indicates a lowering of the free charges in the oxide.