Modelling and simulation of silicon-on-sapphire MOSFETs for analogue circuit design

A simple physically based CAD model for the SOS MOSFET is described suitable for the design of analogue as well as digital circuits. The model has been implemented in the SPICE2 program. A comparison between simulated and measured amplifier characteristics shows significant improvements in modelling accuracy compared with a bulk MOS model. Simulation times for the new model are presented.