Monte Carlo studies on hole mobility in heavily doped n-type Silicon

The minority hole mobility in heavily doped n-type silicon is calculated by means of the Monte Carlo technique from 77K to 350K. Hole-electron scattering and hole-plasmon scattering are included in the simulation. The calculated mobility, based on the Born approximation with the third-body exclusion, is close to the recently measured mobility. The temperature dependence of the calculated mobility is in approximate agreement with the measurements.