Punchthrough diode as the transient voltage suppressor for low-voltage electronics

Protection devices for future low-voltage electronics are needed. Performances of a new punchthrough transient voltage suppressor (TVS) are analyzed with two-dimensional device simulation. Compared with the available low-voltage TVS constructed with a Zener diode, the punchthrough diode shows far superior leakage current and capacitance. These punchthrough TVS devices are satisfactory for applications not only at 3 V but even at 1 V.