A metal-ferroelectric PbTiO/sub 3/-semiconductor switch diode (MFSS) for room-temperature high-speed infrared sensing application

A thin PbTiO/sub 3/-n-p/sup +/ silicon diode (MFSS) has been developed, in which the switching voltage changes in proportion to the infrared light power. The infrared-sensitive parts consist of PbTiO/sub 3/ ferroelectric thin films deposited by RF sputtering. A fast response with a rise time of 0.647 /spl mu/s has been attained, which is fairly fast compared with the other types of thermal infrared sensors. Additionally, there is a wide voltage variation of 9 V for sensing the infrared light from off-state-voltage of 11 V to on-state-voltage of 2 V in the device. In this paper, the current-voltage curves, the effect of infrared light power on switching voltage, and the effects of PbTiO/sub 3/ thickness on switching voltage as well as sensitivity to infrared light are reported in detail.