Strain metrology of devices by dark-field electron holography: A new technique for mapping 2D strain distributions

The authors present the latest results from the new technique of dark-field electron holography (HoloDark) which combines the advantages of the conventional transmission electron microscopy (TEM) with the precision of electron holography and is applicable to standard focused-ion beam (FIB) prepared samples. The authors will present measurements of strain in the active regions of a strained-silicon n-MOSFET device and a test structure for CESL induced strain.