Medium-energy ion scattering for analysis of microelectronic materials

This paper reviews the application of medium-energy ion scattering (MEIS) to the study of materials problems relevant to microelectronics fabrication and reliability. Associated physical mechanisms and techniques are described. Three examples of MEIS studies are discussed in detail: Studies of the nucleation of silicon nitride on silicon dioxide, the interfacial segregation of Cu from Al(Cu), and the structure of hydrogen-terminated silicon surfaces created by various wet etching techniques.