Plasma doping and spike annealing technique for steep SDE formation in nano-scale MOSFET

The significance of impurity profile design for source/drain extension (SDE) is widely recognized for deeply scaled MOSFET. In this paper, novel SDE formation scheme in planar pMOSFET is discussed using plasma doping (PD) and laser spike annealing (LSA), comparing with conventional Ion Implantation (II) technique. It is found that the combination of PD and high-temperature LSA can realize the abrupt boron profile and an additive efficiency of halo doping in channel region.