Highly reconfigurable and error tolerant threshold logic gates based on nanoscale DG-MOSFETs

We focus in this work on threshold logic gates (TLQ) implemented using double-gate (DG) MOSFETs. The proposed TLQ's can be programmed dynamically via secondary (back) gate using the same bias conditions as the primary (front) gate. Moreover, they can realize universal threshold logic functions, which comprise Boolean operations as a subset.