Engineering silicon-on-insulator (SOI) substrates for hybrid orientation technologies (HOT)

In this paper, deep amorphization of SOI substrate that preserves a crystalline surface layer was demonstrated on (110) and (100) oriented SOI films. The crystalline integrity of the surface layer allowed it to be a template for solid phase epitaxy. At an optimized temperature, pseudo-MOSFET measurements indicate a complete recovery of the electronic properties. However, a small increase is observed for the density of interface states. These results demonstrate the feasibility of this approach to form hybrid (100)/(110) SOI films that would allow increasing the hole mobility.