Effect of resistance of TSV's on performance of boost converter for low power 3D SSD with NAND flash memories

This paper investigates the effect of the TSV resistance (R
_TSV
) on the performance of boost converters for Solid State Drive (SSD) using circuit simulation. When R
_TSV
is 0 Omega, both the rising time (t
_rise
) from 0 V to 15 V and the energy during boosting (E
_loss
) of the output voltage (V
_OUT
) are 10.6% and 6.6% of the conventional charge pump respectively. In contrast, when R
_TSV
is 200 Omega, for example, t
_rise
is 30.1% and E
_loss
is 22.8% of the conventional charge pump. Besides, V
_OUT
cannot be boosted above 20 V when R
_TSV
is larger than 210 Omega. Therefore, in order to maintain the advantages of the boost converter over the charge pump in terms of t
_rise
and E
_loss
, the reduction of R
_TSV
is very important.