High-temperature stability performance of 4H-SiC Schottky diodes

Silicon Carbide 300V-5A Schottky diodes for high-temperature space applications have been fabricated and characterized. A reliability test, with a DC current stress at 270ºC during 600 hours has demonstrated the capability to operate up to 300ºC. The main point in this development was the top metallization scheme, where W was used, instead Ni, as Schottky metal, eliminating the voltage drift and producing a stable metal-semiconductor interface In this paper we present the development and characterization of a 300V Schottky Silicon Carbide diode for the high ambient temperature of the BepiColombo Mission using 4H-SiC epitaxied wafers purchased from CREE Research, focusing on the reliability and performance limitations for the blocking stability and forward voltage degradation.