Electrostatic Discharge and electrical overstress on GaN/InGaN Light Emitting Diodes

Results of ESD testing (HBM and TLP) carried out on commercially available GaN LEDs grown on sapphire or silicon carbide will be presented. A non optimal design of layout leads to current crowding phenomena determining premature failure. Devices grown on SiC, adopting vertical current flow, and optimized layout and technology, achieved maximum ESD robustness in excess of 8 kV HBM, 5 A TLP.