Evaluation of the internal quantum efficiency and saturation current of heavily doped emitters

A procedure for analytically calculating the distribution of the charge-collection probability and hence the internal quantum efficiency and saturation current of heavily doped emitters is described. The method relies on a multilayer approximation that can be treated with the transfer matrix method and holes for arbitrary dependence on the depth of the dopant concentration, minority-carrier coefficient, and lifetime, and for any value of the surface recombination velocity.<
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