Numerical analysis of breakdown voltage using quasi three dimensional device simulation

PISCES-IIB is extended to a quasi-three-dimensional simulator for cylindrical symmetric structures. A self-consistent solution of the Poisson and current-continuity equations using an impact ionization model allows simulation of the complete reverse characteristics for planar junction devices. A p/sup +/-n diode with circular geometry and a floating-field limiting ring structure is used to investigate breakdown characteristics. Results of the simulation clearly show the three-dimensional effects of potential distributions and predict the dependence of breakdown voltage on the radius of the rounded patterning mask, in agreement with experimental results.<
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