Electrical properties of PZT thin films derived from sol-gel solution containing photo-sensitive water-generater

The photo sensitivity of sol-gel solution of PbZr/sub x/Ti/sub 1-x/O/sub 3/ (PZT) was confirmed. A coated film of the sol-gel solution on Si and Ir/IrO/sub 2//SiO/sub 2//Si substrates was exposed to an excimer laser and developed with 2-methoxyethanol diluted with isopropyl alcohol. More than 900 mJ/cm/sup 2/ of exposure was required to obtain the micro patterns. The film was finally annealed at 700/spl deg/C for 60 s by rapid thermal annealing (RTA). From this process, half-micron patterns of PZT films were obtained. The 200-nm-thick film showed P/sub r/ of 16.6 /spl mu/C/cm/sup 2/ and E/sub c/ of 38.8 kV/cm. After 1/spl times/10/sup 12/ cycles of switching pulses, the films showed no degradation of remanent polarization. Studying for 1-transistor-type ferroelectric memory, metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structure was prepared with this process.