Studies on transport mechanism in indium tin oxide (ITO)/p-indium phosphide (InP) solar cells prepared by reactive electron beam evaporation and spray pyrolysis techniques

The aim of the present work is to study the effect of process induced defects on the transport mechanism in ITO/InP solar cells. A detailed analyses of electrical properties along with XPS studies have been carried out on ITO/p-InP cells prepared by reactive electron beam evaporation and spray pyrolysis techniques. It is observed that thermionic field emission (TFE) in ITO/p-InP junctions prepared by e beam and tunnelling (below 300 K) and recombination at depletion region (above 300 K) in sprayed junctions are the dominant transport mechanisms. The cells prepared by both the techniques conform to semiconductor-insulator-semiconductor model and the interfacial layer comprises of In/sub 2/O/sub 3/ and InPO/sub 4/ as revealed by XPS data.