1.55 /spl mu/m strained GaInAs/AlGaInAs MQW lasers with a multi-quantum barrier

The authors have fabricated 1.55 /spl mu/m strained GaInAs/AlGaInAs MQW lasers with a multiquantum barrier (MQB). A reduction of carrier leakage upon incorporation of the MQB structure was demonstrated experimentally in long-wavelength lasers for the first time.