2.7-$\mu$ m GaSb-Based Diode Lasers With Quinary Waveguide

Type-I double-quantum-well (QW) GaSb-based diode lasers operating at 2.7 mum with room-temperature continuous-wave (CW) output power of 600 mW and peak power-conversion efficiency of 10% were designed and fabricated. The devices employed 470-nm-wide AlGaInAsSb waveguide optimized for improved device differential gain. CW threshold current density about 100 A/cm
²
per QW and slope efficiency of 150 mW/A were demonstrated at 16degC.