Characterization of poly-Silicon emitter BJTs as access devices for Phase Change Memory

We demonstrate poly-silicon emitter vertical PNP bipolar junction transistors (BJTs) that could be used as access devices for phase change memory. The device arrays fabricated using a 180 nm BiCMOS process exhibit current drive capability in excess of 10 mA/mum
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, on-off ratio greater than six orders of magnitude and excellent cross-talk immunity. Our process integration scheme could be extended to enable a high-density phase change memory technology.