Low-threshold piezoelectric-strained InGaAs-GaAs QW lasers grown on (211)B oriented GaAs substrates

We report the operation of strained layer In/sub 0.20/Ga/sub 0.80/As quantum well lasers grown on (211)B GaAs substrates, thus incorporating a piezoelectric field. Growth was by atmospheric pressure metal-organic vapor phase epitaxy (MOVPE). The threshold current density of a 1000 μm×75 μm device is 91 A/spl middot/cm/sup -2/ and waveguide transparency is estimated at 32 A/spl middot/cm/sup -2/ for a simple separate confinement heterostructure (SCH) emitting at 982 nm.