A new electrode technology for high-density nonvolatile ferroelectric (SrBi/sub 2/Ta/sub 2/O/sub 9/) memories

New electrode materials (Ir and IrO/sub 2/) are proposed for high-density nonvolatile ferroelectric random access memories (NVFERAMs). These electrodes are used in order to integrate ferroelectric (SrBi/sub 2/Ta/sub 2/O/sub 9/) capacitors with standard CMOS technology. Excellent electrical characteristics (e.g. low leakage and high polarization), good fatigue resistance and good mechanical properties (i.e. excellent adhesion to SiO/sub 2/ without using a glue layer) were obtained for the new capacitor structures.