Buried-oxide charge trapping induced performance degradation in fully-depleted ultra-thin SOI p-MOSFET's

The buried-oxide charge trapping induced performance degradation was studied in fully-depleted, ultra-thin SOI p-MOSFET's fabricated on SIMOX wafers. The trapped holes were introduced by X-ray irradiation, and the trapped electrons were introduced by hot hole impact ionization. Subthreshold slope and current drive degradations were observed due to hole-trapping in the buried oxide, via electrostatic coupling between the front and back interfaces. Simulation results showed much reduced performance degradation in SOI p-MOSFET's using thin buried oxides. A minimal interaction of front-channel hot-carrier and radiation effects on the buried oxide degradation, was observed in 0.3-/spl mu/m channel length transistors.