Mathematical models and dynamic characteristics for pulsed IMPATT diode

Mathematical models for the analysis of high-power pulsed IMPATT-diode microwave oscillators are presented. These models take into account charge diffusion, impact ionization, carrier drift velocity changes as well as an exact temperature distribution along the active layer. The temperature distribution is of great importance for the computation of dynamic admittance characteristics. New type of IMPATT diode is proposed that has an improved generated frequency and power stability.