A comparative study of hot-carrier induced light emission and degradation in bulk and SOI MOSFETs

This paper presents a detailed study on hot-carrier induced luminescence and degradation of bulk and partially depleted SOI MOSFETs fabricated in the same wafer run, hence with directly comparable device parameters. In particular, we analyze the bias and energy (E) dependence of emission in virgin transistors, and its correlation with hot-carrier induced degradation.