Static and dynamic response of multiple-quantum-well voltage-controlled bistable laser diodes

We have simulated the static and dynamic characteristics of voltage-controlled multiple-quantum-well (MQW) bistable laser diodes. To investigate the time response of the saturable absorber under applied electric field, we performed pump-probe measurements with picosecond resolution. The obtained differential transmission signals indicate the reduction of the carrier escape time for the saturable absorber with increasing applied electric field. The field screening effect caused by spatial change of the carrier distribution is an important factor, as is phase space filling due to the photogenerated carriers. On the basis of the time response measurements, we have designed an MQW bistable laser by solving the modified rate equation including the recovery time response of the absorption saturation, A saturable absorption region narrower than 10 /spl mu/m is suitable for obtaining a low threshold device. To achieve low switching power and high switching speed, it is important to optimize the bias conditions and the MQW structures. We can expect a turn-off time of less than 10 ps, and a repetition rate of over 5 GHz from the calculations.