Investigations on the influence of Peltier effect and electromigration during growth of InP, InGaP and InAsP by liquid phase electro-epitaxy

Liquid phase electroepitaxy is one of the novel techniques for the growth of III-V compound semiconductors. In this technique, growth is carried out by passing an electric field through the substrate-solution interface under isothermal conditions. The two major factors influencing the growth are Peltier effects and electromigration. In the present communication, a model has been developed to understand the growth mechanism of InP, InGaP and InAsP semiconductors. The model is based on the diffusion and electromigration of the solute atoms. During Peltier cooling conditions, growth occurs. When the direction of the electric field is reversed, dissolution of solute atoms is observed due to Peltier heating at the interface. Computer simulation has been employed to construct the concentration profiles of the solute atoms in the immediate vicinity of the growing interface in the In rich melt during the growth of InP.