High performance power DMOSFET with integrated Schottky diode

A hybrid DMOSFET-Schottky (FastFET) device has been developed that exhibits the excellent on-resistance and gate control properties of the DMOSFET along with improved internal diode switching characteristics. The 45 V and 30 V devices fabricated use an integrated Schottky device that consumes less than 15% of the active area while returning a 35% improvement in reverse recovery performance. The leakage of the FastFET is higher than that of the standard DMOSFET but is still within the tolerances set by most manufacturers' data sheets. Future improvements will include process modification that will reduce this leakage.<
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