Scanning tunneling microscopy observations of molecular beam epitaxially grown compound semiconductor surfaces

Summary form only given. With the advent of scanning tunneling microscopy (STM), it became possible to observe individual atoms on the surfaces of semiconductors. In this paper, we report on the surface structures of compound semiconductor substrates, such as GaAs, InP and InAs, and heteroepitaxially grown surfaces on these substrates, using a multi-chamber STM system equipped with a molecular beam epitaxy (MBE) facility.