Impurity-related photoluminescence from InGaN LED material

Summary form only given. In this paper, we explain quantitatively the nature of the major emission band in Nichia LEDs. The experimental low-temperature (20 K) and room-temperature (RT) spectra were obtained by photoluminescence (PL). A broad impurity-related PL band, with an undulated envelope centered at 465 nm (2.67 eV), was observed at both low and room temperatures when the pump beam illuminated the active region.