Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al2O3/Ga2O3(Gd2O3as gate dielectrics

The authors have successfully demonstrated self-aligned high-performance inversion-channel In
_0.53
Ga
_0.47
As MOSFETs using UHV-deposited nano-meter thick AI
₂
O
₃
/GGO dual-layer dielectrics and a TiN metal gate. Record-high drain current and transconductance, despite its challenging process, were achieved. Ring gate D-mode In
_0.2
Ga
_0.8
As MOSFETs using as a similar dual layer gate dielectric also exhibits very high current densities and transconductance.