Inversion layer properties of 〈110〉 uniaxially strained silicon n-channel MOSFETs

This paper discusses the influence of 〈110〉 uniaxial tensile stress on some of the inversion layer properties of (100) silicon n-channel MOSFETs. Quantum mechanical calculations are performed assuming Airy function approximation holds. Uniaxial tensile strain lowers the eigen-energies and increases the occupation of the ground state. Average inversion layer penetration is also decreased. The change in the surface electric field due to strain is insignificant.