A new approach for the electrothermal modeling of the power bipolar transistor

We have developed an electrothermal model for the bipolar power transistor, implemented in the Saber simulator, in which the device's temperature becomes an interactive variable during the simulation. Two approaches for the electrothermal coupling are compared and discussed. The accuracy of the model is appreciated with the electrical and thermal characterization of a NP/spl nu/N power bipolar transistor using the Iccap-Saber interface.<
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