OMVPE growth and characterization of Ga1-xMnxAs diluted magnetic semiconductor

A set of Ga
1-x
Mn
x
As epitaxial layers with variable Mn content x
Mn
was prepared using the low-pressure OMVPE. We have studied electrical transport properties and optical characteristics as a function of x
Mn
. Mn atoms are incorporated into the GaAs as an acceptor and at the same time as an electrically neutral centre. The saturation level for doping is 2.2×10
¹⁸
cm
^-3
. The ternary alloy formation is indicated by photoreflectance measurements and the Mn content in the alloy saturates at 4.1×10
²⁰
cm
^-3
.