Silicon nanowire CMOSFETs : Fabrication, characteristics, and memory application

Continuous device scaling has led to the development of various transistors such as Ultra-Thin-Body SOI MOSFET, FinFET, and gate all around (GAA) MOSFETs [1∼5]. As the device shrinks further, the ultimate MOSFET structure would be GAA nanowire MOSFET with a fully depleted channel thoroughly controlled by the gate electrode. In this paper, fabrication processes of silicon nanowire MOSFETs on bulk Si using top-down method, their characteristics including 1D and quantum dot characteristics will be reported. Also applicable examples to memory devices such as SRAM and NAND Flash will be demonstrated.