Prediction of channel thermal noise in twin silicon nanowire MOSFET (TSNWFET)

In this work, channel thermal noise in the twin silicon nanowire MOSFET (TSNWFET) is predicted using analytic thermal noise model taking into account short channel effects. TSNWFET used in this work has 40 nm gate length, 5 nm radius of silicon wire, and the 3.5 nm of gate oxide. Predicted thermal noise is compared with that of the planar MOSFET using various processes.