An Al/sub x/Ga/sub 1-x/Sb avalanche photodiode with a gain bandwidth product of 90 GHz

An Al/sub x/Ga/sub 1-x/Sb avalanche photodiode (APD) with an Al composition of 0.05 has been fabricated and tested. The measured gain-bandwidth (GB) product of the highly doped diode is 90 GHz. Such a large GB product has never been previously achieved by any APD materials sensitive in the long-wavelength region. This suggests the advantage of the Al/sub x/Ga/sub 1-x/Sb material system for very high-speed operation.<
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