Hot electron transistors controlled by insulated gate with 70 NM-wide emitter

The emitter width of the hot electron transistor controlled by an insulated gate was reduced to 70 nm by an improved fabrication process. In a previous study, the observed output conductance was twofold higher than transconductance. In this study, the output conductance was reduced from 115 mS/mm to 20 mS/mm by the improved fabrication process and a clear current modulation was also confirmed.