Material and electrical characterization of stackable planar polysilicon TFT flash memory cell with metal nanocrystals and high-k dielectrics

We have characterized the metal-NC high-k-dielectric flash memories on low-temperature UTB-TFTs. Combined with the advantage of low-voltage operations, the reported planar process is expected to be applicable for 3D integration to meet high-density flash memory requirements. Carrier transport was also confirmed to be Frenkle-Poole emission in (Ti,Dy)O and direct tunneling in Al
₂
O
₃
due to the different trap densities, which helps the retention time in the Al
₂
O
₃
/Au/(Ti,Dy)O memory devices.