Influences of annealing conditions on flatband voltage properties using continuously workfunction-tuned metal electrodes

This paper reports a systematic investigation of flatband voltage (V
_fb
), properties for HfO
₂
-SiO
₂
-Si capacitors using metal alloy electrodes of Pt-W alloy as a means of tuning work function (WF). It was found that the value of V
_fb
, for W (lower WF) is retained after forming gas annealing (FGA) and oxidizing gas annealing (OGA) processes, while that for Pt (higher WF) strongly depends on the annealing condition. The difference in V
_fb
, between Pt and W is 0.34 V at most, which is smaller compared with the WF difference of 0.8 eV.